4500 V沟槽栅IGBT芯片的设计与研制

Design and Development of 4 500 V Trench Gate IGBT

为提升IGBT单芯片的电流密度,掌握高压沟槽栅IGBT技术,进行4500 V沟槽栅IGBT芯片的研制。使用TCAD仿真软件,对4500 V沟槽栅IGBT的衬底材料、载流子储存层设计、沟槽宽度、沟槽深度、假栅结构等方面进行研究和仿真分析,明确各方面设计与芯片性能的关系。根据总体设计目标,确定相应的芯片结构和工艺参数,并对4500 V沟槽栅IGBT芯片进行流片验证。验证结果显示:4500 V沟槽栅IGBT芯片的测试结果符合设计预期,芯片的额定电流、导通压降、开通损耗和关断损耗等关键参数相比平面栅IGBT芯片有明显优化。

In this paper, a 4 500 V trench gate IGBT chip was developed, so as to improve the single chip current density as well as to master the technology of high voltage trench gate IGBT. Using the TCAD simulation software, experiments were carried out on the aspects of the substrate material, carrier stored layer design, trench width, trench depth and dummy trench gate structure, whose impacts on the chip performance were analyzed. According to the overall design goal, the chip structure and process parameters were determined, and the 4 500 V trench gate IGBT chip was fabricated and verified. The test results of 4 500 V trench gate IGBT chip can meet the design expectation, and its key parameters, such as rated current, saturation voltage, turn-on switching energy and turn-off switching energy, have been significantly improved compared with the planar gate IGBT chip.