基于InGaP/GaAs HBT的高效率高谐波抑制功率放大器

High Efficiency and High Harmonic Suppression Power Amplifier Based on InGaP/GaAs HBT

将基于InGaP/GaAs HBT工艺的高线性功率放大器芯片、CMOS控制芯片、输出匹配电路集成于双层基板,研制了一款工作在S波段的高效率、高谐波抑制功率放大器模组(MCM)。通过在输出匹配电路中引入多个LC谐振网络,抑制了输出信号的高次谐波分量,改善了放大器模组的线性度和效率。在电源电压4 V、静态电流220 mA、工作频率1.9~2.1 GHz条件下,其小信号增益大于34.3 dB,1 dB压缩点输出功率大于34.3 dBm,功率附加效率大于44.2%,谐波抑制比小于-55.0 dBc;采用21.6 kHzπ/4正交相移键控(QPSK)方式调制信号,功率放大器模组输出功率为34 dBm时,其误差向量幅度(EVM)小于3.1%,第一邻近信道功率比(ACPR1)小于-31 dBc,第二邻近信道功率比(ACPR2)小于-41 dBc。该放大器模组可广泛应用于卫星通信等领域。

A power amplifier multi-chip module(MCM)with high efficiency and high harmonic suppression working in S-band was developed,in which a high linearity power amplifier chip based on InGaP/GaAs HBT process,a CMOS controller chip,and output matching circuits were integrated on a double-layer substrate.By introducing several LC resonant networks into the output matching circuit,the harmonic component of the output signal is suppressed,and the linearity and efficiency of the amplifier MCM are improved.Under the condition of a supply voltage of 5 V,a static current of 220 mA,and a frequency range of 1.9~2.1 GHz,the amplifier MCM achieves a small signal gain greater than 34.3 dB,an output power at 1 dB compression point greater than 34.4 dBm,an additional power efficiency greater than 44.2%,and a harmonic suppression ratio smaller than-55 dBc.Under 21.6 kHzπ/4 quad-phase shift keyed(QPSK)modulation,the power amplifier MCM exhibits an output power of 34 dBm,an error vector magnitude(EVM)smaller than 3.1%,and a first adjacent channel power ratio(ACPR1)smaller than-31 dBc,and a second adjacent channel power ratio(ACPR2)smaller than-41 dBc.As a result,the amplifier MCM can be widely used in satellite communication and other fields.