2.5D器件中硅通孔结构设计

The Structure Design of Through Silicon Via in 2.5D Devices

通过ANSYS有限元仿真技术对2.5D器件中的硅通孔结构进行结构设计、仿真分析。通过对比仿真结果,得出更适用于宇航用高低温循环场景下的硅通孔结构。首先通过对比热循环载荷条件下不同2.5D器件中硅通孔结构的热力学性能;其次选取不同的封装材料对硅通孔结构进行建模,研究不同硅通孔模型中的应力集中行为,并对其长期可靠性进行分析;最终得到更适用于宇航环境的2.5D器件的硅通孔结构。

This paper studied the structure design and simulation analysis of the TSV(Through Silicon Via)in2.5 D electronic devices by ANSYS software and ensured the more reasonable TSV structure in the aerospace application environment according to the simulation results.Firstly,we compared with the thermal mechanical behavior of several TSV Structure in the temperature cycles;then chose variable material to form four different TSV structures,studied the stress concentration behavior and long-term reliability in the those TSV structures.In the end we found the more reliable TSV structure to guarantee the 2.5 D electronic devices quality to comfort with aerospace application environment.