氢化物气相外延生长氮化镓单晶衬底的研究进展

Progress on GaN Single Crystal Substrate Grown by Hydride Vapor Phase Epitaxy

氮化镓(GaN)晶体是制备蓝绿光激光器、射频微波器件以及电力电子等器件的理想衬底材料,在激光显示、5G通讯及智能电网等领域具有广阔的应用前景。目前市场上的氮化镓单晶衬底大部分都是通过氢化物气相外延(Hydride Vapor Phase Epitaxy,HVPE)方法生长制备的,在市场需求的推动下,近年来HVPE生长技术获得了快速的发展。本论文综述了近年来HVPE方法生长GaN单晶衬底的主要进展,主要内容包含HVPE生长GaN材料的基本原理、GaN单晶中的掺杂与光电性能调控、GaN单晶中的缺陷及其演变规律和GaN单晶衬底在器件中的应用。最后对HVPE生长方法的发展趋势进行了展望。

Bulk GaN is an ideal substrate for the fabrication of blue and green laser diodes(LDs),RF devices,and power electronic devices,which has broad prospects in the application of laser display,5G mobile communication,and smart grid.The commercial bulk GaN substrates are mainly produced by hydride vapor phase epitaxy(HVPE)at present.Driven by the market demand,HVPE technology has developed rapidly in recent years.In this paper,recent progress in HVPE growth of bulk GaN substrate were reviewed,including the growth mechanisms of HVPE,doping in bulk GaN and the controlling of optical and electrical properties,the main defects in bulk GaN and their evolution,and the application of bulk GaN substrates in related devices.At last,the development trend of HVPE technology is previewed.