氮化镓基Micro-LED显示技术研究进展

Development of GaN-Based Micro-LED Display Technology

现代社会已经进入信息化并向智能化方向发展,显示是实现信息交换和智能化的关键环节。在目前众多显示技术中,Micro-LED显示技术被认为是具有颠覆性的次世代显示技术,得到学术界与产业界的广泛关注。Micro-LED显示技术是一种新自发光显示技术,具有对比度高、响应快、色域宽、功耗低及寿命长等优点,可以满足高级显示应用的个性化需求。然而目前在Micro-LED显示商业化进程中,依然存在一些技术瓶颈尚未解决。应用于Micro-LED晶圆的外延技术需考虑衬底选择、波长均匀性及缺陷控制等方面因素;Micro-LED器件的效率衰减问题目前依然没有有效的解决途径;此外利用颜色转换媒介实现单片Micro-LED全彩显示技术尚未成熟。本文从以上3个问题点出发,分别综述了Micro-LED显示目前存在的技术问题及研究现状。

Modern society has realized informationization and is developing towards intelligentization.The technology of display is the key tache to achieve the information intercharge and intelligence.Among the many display technologies,the Micro-LED display has emerged as the next-generation displays due to the excellent properties,such as high contrast,fast response,wide color gamut,low power consumption and long lifetime which could be used in the application with advanced display needs.However,in the commercialization of Micro-LED display technology,there are still some technical bottlenecks that have not been solved.For epitaxial technology,the substrate selection,wavelength uniformity and defect management need to be considered for the application of Micro-LED display.For the Micro-LED devices,there is still no effective solution to solve the efficiency attenuation.Furthermore,by using the color conversion media,the monolithic full-color display technology is not yet mature which need further investigation.Starting from the above three issues,this article reviews the development and the current technical issues of Micro-LED displays.