氮化镓单晶的液相生长

Liquid Phase Growth of GaN Single Crystal

氮化镓(GaN)具有高击穿场强、高饱和电子漂移速率、抗辐射能力强和良好的化学稳定性等优良特性,是制作宽波谱、高功率、高效率光电子、电力电子和微电子的理想衬底材料。除气相法(包括HVPE(氢化物气相外延)、MOCVD(金属有机化合物化学气相沉淀)、MBE(分子束外延))生长GaN单晶外,液相法(包括氨热法和助熔剂法)近几年在制备GaN单晶方面取得了较大的进展。本文介绍了氨热法和助熔剂法的生长原理、装备特点及生长习性;综述了两种液相生长方法的研究历程及研究进展,并对液相法生长GaN单晶的发展趋势及主要挑战进行了展望。

Gallium nitride(GaN)has excellent properties such as high breakdown field strength,high saturation electron drift rate,strong radiation resistance and good chemical stability.It is an ideal substrate material for the fabrication of wide spectrum,high power,high efficiency photoelectron,power electronics and microelectronics.In addition to vapor phase method(including HVPE(hydride vapor phase epitaxy),MOCVD(metal-organic chemical vapor deposition),MBE(molecular beam epitaxy))of GaN single crystal growth,liquid phase method(including ammonothermal method and flux method)has made great progress in recent years.In this paper,the growth principle,equipment characteristics and growth habit of ammonothermal method and flux method are introduced.The research process of two liquid phase growth methods are reviewed.The development trend and main challenges of liquid phase growth of GaN single crystal are prospected.