氮化镓单晶衬底制备技术发展与展望

Development and Trends of GaN Single Crystal Substrate Fabrication Technology

氮化镓(GaN)是第三代半导体材料中的典型代表。因其良好的物理化学性能与热稳定特性,是制作光电子器件及电力电子器件的理想材料。采用同质外延技术在GaN单晶衬底上制备GaN基器件是实现其高性能的根本途径。本文综述了GaN单晶衬底制备的氢化物气相外延技术、三卤化物气相外延技术、氨热法及助熔剂法(钠流法)的研究进展,并对未来可能的发展方向提出了展望。

Gallium nitride(GaN)is a typical material of the third generation of semiconductor materials.It is an ideal material for application in optoelectronic devices and power electronic devices,due to its good physical and chemical properties and thermal stability.Fabrication of GaN-based devices on GaN single crystal substrates by using homo-epitaxial technique is the fundamental way to obtain devices with high performances.This article reviews the research progress of method for grown of GaN single crystal substrate,such as hydride vapor phase epitaxy technology,tri-halide vapor phase epitaxy technology,ammonothermal method and Na-flux method.The future development of technology for mass production of free-standing GaN substrate is also discussed.