AlGaN基宽禁带半导体光电材料与器件

AlGaN Based Wide Bandgap Photoelectric Materials and Devices

AlGaN基材料是带隙可调的直接带隙宽禁带半导体材料,是制备紫外(UV)光电子器件的理想材料。经过数十年的研究,目前已经在异质衬底外延生长AlGaN基材料、高效掺杂等方面取得了巨大进展。以此为基础,AlGaN基紫外光电器件制备领域也得到长足发展。在本综述中,主要介绍了高质量AlGaN基材料的MOCVD外延生长方法、掺杂方法以及近年来在紫外发光、紫外探测器件方面取得的进展。

AlGaN based materials are promising to fabricate UV photoelectric devices due to the direct,wide and adjustable bandgap.With decades of research efforts,great progress has been made in improving the quality of AlGaN based materials on heterogeneous substrates,and the doping efficiency has been greatly improved.As a result,great progress has been made on the fabrication of UV photoelectric devices.In this review,the growth methods to obtain high quality AlGaN based materials by metal-organic chemical vapor deposition(MOCVD)and the methods to achieve high doping efficiency are summarized.Moreover,the recent progress of UV LED and UV photodetectors are also introduced.