新一代SiC功率MOSFET器件研究进展

Development of New-Generation SiC Power MOSFET

自2017年报道SiC(碳化硅)功率金属-氧化物半导体场效应晶体管(MOSFET)技术进展以来,针对器件比导通电阻(RON,SP)高等问题不断优化器件结构设计,本课题组改进关键加工工艺,使1200 V SiC MOSFET的RON,SP从8 mΩ·cm^2降低到4.8 mΩ·cm^2。与此同时,本课题组采用新一代SiC MOSFET设计和工艺技术研制出6.5 kV、10 kV以及15 kV等高压低导通电阻SiC MOSFET,其中10 kV和15 kV器件的比导通电阻分别为144 mΩ·cm^2和204 mΩ·cm^2,接近单极型SiC器件的理论极限。

Since the technical progress of SiC power metal oxide semiconductor field effect transistor(MOSFET)were published in 2017,the device structure design were optimized in view of the high specific on-resistance(RON,SP).Our research group has improved the key processing technology to reduce the RON,SP of 1200 V SiC MOSFET from 8 mΩ·cm^2 to 4.8 mΩ·cm^2.Using the new design methods and fabrication processes,high performance SiC MOSFET for voltage ratings from 6.5 kV up to 15 kV were achieved.The RON,SP is 144 mΩ·cm^2 for the 10 kV devices and 204 mΩ·cm^2 for the 15 kV devices which is close to the SiC theoretical limit.