基于多角度文献计量的中美碳化硅MOS器件研究现状比较

Comparison on Research Status of Silicon Carbide Power MOS Devices between China and the United States Based on Multi-angle Bibliometrics

为了多角度对比中美两国碳化硅功率MOS器件领域的研究现状和重点研究方向,厘清了中美两国在该领域的具体差距及原因,基于In⁃nography专利平台对碳化硅功率MOS器件领域的专利文献进行情报分析,使用InCites数据库平台和VOSviewer可视化软件对Web of Science核心合集收录的科研论文进行相关情报分析,多角度对比分析中美两国碳化硅功率MOS器件的研究态势、市场占领情况、技术实力机构、主要基金投入、重点研究方向等情报信息,从产业结构布局、专利布局、资金投入、重点研究方向等方面给出相应的结论和建议,为我国布局和发展第三代功率半导体器件提供思路。

In order to compare the research status and key research directions of silicon carbide power MOS devices in China and the United States from multiple angles,and clarifies the specific differences and reasons in this field between China and the United States,based on the Innography patent platform,this paper conducts intelligence analysis on the pat⁃ent literature in the field of silicon carbide power MOS devices,and uses the InCites database platform and VOSviewer vi⁃sualization software to conduct relevant intelligence analysis on scientific papers included in the Web of Science core col⁃lection,carries out multi-angle comparative analysis of intelligence information,which is on the research situation,market occupation,technical strength institutions,major fund investment,and key research directions of silicon carbide power MOS devices in China and the United States,gives the corresponding conclusions and suggestions from the four aspects of industrial structure layout,patent layout,capital investment and key research direction,so as to provide ideas for the layout and development of third-generation power semiconductor devices in China.