摘要
We report a perpendicular magnetic tunnel junction(p MTJ)cell with a tunnel magnetoresistance(TMR)ratio of nearly 200%at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL)and a synthetic antiferromagnetic(SAF)multilayer[Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL).The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop.The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than that of FL.The reason is related to the interlayer exchange coupling(IEC)through a moderately thick Ta spacer layer among SAF-RLs,which generates a moderate and negative bias magnetic field on Co Fe B of RL.However,the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics.
作者
Qingwei Fu
Kaiyuan Zhou
Lina Chen
Yongbing Xu
Tiejun Zhou
Dunhui Wang
Kequn Chi
Hao Meng
Bo Liu
Ronghua Liu
Youwei Du
付清为;周恺元;陈丽娜;徐永兵;周铁军;王敦辉;迟克群;孟浩;刘波;刘荣华;都有为(National Laboratory of Solid State Microstructures,School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China;York-Nanjing Joint Center(YNJC)for Spintronics and Nanoengineering,School of Electronics Science and Engineering,Nanjing University,Nanjing 210093,China;Centre for Integrated Spintronic Devices,School of Electronics and Information,Hangzhou Dianzi University,Hangzhou 310018,China;Key Laboratory of Spintronics Materials,Devices and Systems of Zhejiang Province,Hangzhou 311305,China)
基金
Supported by the National Key Research and Development Program of China(Grant No.2016YFA0300803)
the Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology
the National Natural Science Foundation of China(Grant Nos.11774150 and 11874135)
the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20170627)。
