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FeOOH-SiC光芬顿体系的简易制备及性能研究 被引量:5

Simple Synthesis of FeOOH-SiC Photo-Fenton System and Performance Research
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摘要 采用简易的室温沉淀法制备了一系列羟基氧化铁-碳化硅(FeOOH-SiC)二元复合半导体材料,并对其进行了分析表征。通过紫外可见漫反射光谱和扫描电镜等分析证实体系由两相构成且可见光吸收能力增强显著。罗丹明B(RhB)光芬顿催化降解实验表明:相比两个纯组分,复合体系的催化降解能力有明显提升,其中催化能力最强的样品FS-50在3 h内能降解90%的RhB分子,其表观反应速率常数是纯FeOOH和SiC的5.0倍和13.1倍。复合体系光芬顿活性增强的主要原因可能与相组成合适、可见光吸收能力增强和能带结构匹配有关。根据能带结构的计算结果,提出了一个可能的光芬顿反应机制。 A series of FeOOH-SiC binary composite semiconductors were prepared by a simple room temperature precipitation method and subsequently characterized.By the analysis of ultraviolet-visible diffuse reflectance spectroscopy and scanning electron microscopy,it is confirmed that the system is composed of two phases and the visible light absorption capacity is significantly enhanced.The Rhodamine B(RhB)photo-Fenton catalytic degradation experiments show that:compared with two pure components,the catalytic degradation ability of the composite system is significantly improved.Among them,the FS-50 sample with the strongest catalytic ability can degrade 90%RhB molecules in 3 h,and its apparent reaction rate constant is 5 and 13.1 times that of pure FeOOH and SiC.The main reason for the enhanced photo-Fenton activity of the composite system may be related to the appropriate phase composition,enhanced visible light absorption capacity and energy band structure matching.Based on the calculation results of the energy band structure,a possible photo-Fenton reaction mechanism is proposed.
作者 张天旭 亓迎飞 都峙烨 徐天翔 常飞 刘小骐 ZHANG Tianxu;QI Yingfei;DU Zhiye;XU Tianxiang;CHANG Fei;LIU Xiaoqi(College of Science,University of Shanghai for Science and Technology,Shanghai 200093,China;School of Environment and Architecture,University of Shanghai for Science and Technology,Shanghai 200093,China;Institute of Tianjin Seawater Desalination and Multipurpose Utilization,State Oceanic Administration,Tianjin 300192,China)
出处 《有色金属材料与工程》 CAS 2020年第5期16-21,共6页 Nonferrous Metal Materials and Engineering
基金 国家自然科学基金资助项目(21207089) 上海市自然科学基金资助项目(17ZR1419200)。
关键词 光芬顿 FEOOH 碳化硅 机制 photo-Fenton FeOOH SiC mechanism
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