蓝宝石片的皮秒激光划片工艺研究

Study on Picosecond Laser Dicing Process of Sapphire Substrates

由于具有硬度高、热导低及脆性大的特点,蓝宝石材料的精细加工较为困难。对皮秒脉冲激光用于蓝宝石片划片的特点进行了分析和讨论。在此基础上,对用于红外焦平面组件封装的蓝宝石片的皮秒激光划片参数进行了研究,并得到了一系列优化参数。对于红外焦平面阵列封装中常用的厚度为0.4 mm的蓝宝石过渡电极板,在组合划片参数为P(100)X(0.01/20)Y&Z(12)Z(0.1/3)时达到了最佳划片效果。分析了激光功率参数变化对划片的影响,并对实际划片操作中的一些问题进行了探讨。

Fine processing of sapphire material is quite difficult because of its high hardness,low thermal conductance and fragility.Through analyzing and discussing the features of picosecond pulse laser for dicing of sapphire substrates,the parameters of the laser dicing have been researched in the process of sapphire components and parts for infrared focal plane array packaging,and a series of optimized parameters have been obtained.For the sapphire transition electrode plate with a thickness of 0.4 mm commonly used in infrared focal plane array packaging,the best dicing effect is achieved when the combined dicing parameter is P(100)X(0.01/20)Y&Z(12)Z(0.1/3).The influence of the change of laser power parameters on dicing is analyzed,and some problems in the actual dicing operation are discussed.