摘要
In the past decade,III-V semiconductor material such as gallium phosphide(GaP),gallium nitride(GaN)and related nitride compounds,have been developing very rapidly due to their wide range of applications.Ion beams were proven to be an efficient method to modify the structure and properties of the materials.In the present work,lattice defects produced in GaN crystal by 350 MeV 56Fe21+ions were characterized by using various methods including Raman scattering,XRD and photoluminescence(PL)spectrometry at room temperature.
基金
National Natural Science Foundation of China(1103Y623010)
Foundation of west of light(29Y523020)
Natural Science Foundation of GanSu(1501RJZA009)。
