摘要
Single event effect(SEE)induced by high energy heavy ions is one of the most important radiation effects of microelectronics in spacecraft.SEE imaging provides a powerful technique in the study of SEE mechnism.However,the imaging resolution of SEE induced by high energy heavy ions in ground-based experiment is limited to 500 nm with the present heavy ion microbeam and photon or electron emission microscopy technologies[1].In order to achieve higher resolution in SEE spatial analysis,we come up with a new imaging technology,which obtains the beam position coordinates by collecting and analyzing the fluorescence photons excited by the single ions.The prospective resolution could be better than 100nm according to the photon number achieved optimally[2].
