基于氮化铝薄膜的新型MEMS振动传感器

Novel MEMS vibiration sensor based on AlN thin film

为验证氮化铝薄膜在传感器设计技术方面具有独特的优势,以振动传感器为例开展氮化铝薄膜MEMS振动传感器设计与试验研究,通过在不同敏感位置设计制作不同的电极开展比对测试试验研究工作。在振动台上对设计有多种测试电极的芯片样品进行比对标定测试,验证了氮化铝薄膜MEMS振动传感器可以获得很好的灵敏度特性和频率响应特性;4个Y电极灵敏度响应一致性很好,并可分辨出不同应力分布区域灵敏度响应上的差别;4个X电极同样获得较好的灵敏度频率响应,但由于电极设计与Y电极存在差异,因此响应有所不同,X电极由于面积更小,分布电容的影响不容忽视。

In order to verify the unique advantages of aluminum nitride thin film in sensor design technology,take the vibration sensor as an example to perform the design and experimental research of aluminum nitride film MEMS vibration sensor,and conducts comparison test experimental research by designing and fabricating different electrodes at different positions of sensing structure.By comparing and calibrating the chip samples designed with various test electrodes on the vibrating table,it is verified that the aluminum nitride film MEMS vibration sensor can obtain good sensitivity characteristics and frequency response characteristics.The sensitivity response of the 4 Y electrodes is very consistent,and the difference in sensitivity response of different stress distribution areas can be distinguished;the 4 X electrodes also obtain better sensitivity frequency response,but due to the difference in electrode design and Y electrode,the response of the X electrode is a little bit different from 4 Y electrodes.The difference is that due to the smaller area of the X electrode,the influence of the distributed capacitance cannot be ignored.