期刊文献+

基于积分球系统的有机-无机杂化钙钛矿发光二极管量子转化效率的测量 被引量:1

Quantum Conversion Efficiency Measurement of Organic-Inorganic Hybrid Perovskite Light-Emitting Diode Based on Integrating Sphere System
原文传递
导出
摘要 有机-无机杂化钙钛矿发光二极管(PeLED)作为一种新型发光器件,具有原料来源广、器件制备简单和载流子迁移率高等优点,使其成为显示与发光领域的研究热点之一。由于PeLED存在发光稳定性差和器件均匀发光区域小的缺点,并且对于PeLED量子效率的测试没有统一的测量方法。鉴于此,提出一种新型的PeLED量子转化效率测量系统。首先采用小尺寸积分球并结合光谱测量系统对PeLED发射光进行收集,最终得到其量子转化效率。然后采用GaN发光二极管的数据作为标准数据,并对该系统的中心波长、亮度及辐射亮度进行校准。最后使用该测量系统测量PeLED器件的性能。实验结果表明,当电压为3.2V时,PeLED的外量子效率最高,值为0.089%,与参考值的误差不超过6%。 Organic-inorganic hybrid perovskite light-emitting diodes(PeLEDs)is a new type of light-emitting device,it have many advantages,including a wide range of raw material sources,simple device preparation,and high carrier mobility,making it one of the research hotspot in the field of displays and luminescence.Despite this,PeLEDs do have disadvantages,such as poor luminescence stability and small,uniform luminous areas,and there is no unified measurement method for testing PeLED quantum efficiency.In light of this,we propose a new type of PeLED quantum conversion efficiency measurement system.Using a small-sized integrating sphere combined with a spectrum measurement system to collect the PeLED light emission,the quantum conversion efficiency is determined.Standard GaN light-emitting diode data is used to calibrate the center wavelength,brightness,and radiance of the system.Finally,this system is used to measure the performance of actual PeLED devices.Experimental results show that the PeLED external quantum efficiency is the highest(0.089%)at a voltage of 3.2V,and the error determined from the reference did not exceed 6%.
作者 李婉 冯州 苏杭 张立来 索鑫磊 李国龙 Wan Li;Zhou Feng;Hang Su;Lilai Zhang;Xinlei Suo;Guolong Li(Key Laboratory of Ningxia for Photovoltaic Materials,Ningxia University,Yinchuan,Ningxia 750021,China)
出处 《激光与光电子学进展》 CSCD 北大核心 2020年第21期253-259,共7页 Laser & Optoelectronics Progress
基金 国家自然科学基金(61565015)。
关键词 光学设计 测量 钙钛矿发光二极管 外量子效率 积分球 光谱仪 optical design measurement perovskite light-emitting diode external quantum efficiency integral sphere spectrometer
  • 相关文献

参考文献10

二级参考文献37

  • 1成建波,蒋泉,林祖伦,陈文斌,杨刚,饶海波,祁康成.无源OLEDs器件的设计和制作[J].光电子.激光,2004,15(11):1315-1319. 被引量:6
  • 2Nakamura S, Mukai T, Senoh M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes [J]. Appl. Phys. Lett., 1994, 64(13):1687-1689.
  • 3Schnizer I, Yablonovitch E. 30% external quantum efficiency from surface textured, thin-film light-emitting diodes [J].Appl. Phys. Lett., 1993, 63(16):2174-2176.
  • 4Huang K H, Yu J G, Kuo C P, et al. Twofold efficiency improvement in high performance A1GaInP light-emitting diodes in the 555-620nm spectral region using a thick GaP window layer [J]. Appl. Phys. Lett., 1992, 61(9): 1045-1047.
  • 5Fletcher R M, Kuo C P, Osentowski T D, et al. The growth and properties of high performance AlGaInP emissions using a lattice mismatched GaP window layer [J]. Electronic Materials, 1991, 20(12):1125-1130.
  • 6Tang Junfa, Zheng Quan. Application of Film Optics [ M]. Shanghai: Shanghai Science and Technology Press, 1984.
  • 7Kish F A, Sterranka F M, Defevere D C, et al. Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes [J]. Appl. Phys. Lett., 1994, 4(21):2839-2841.
  • 8Sugawara H, Itaya K, Nozaki H, et al. High-brightness InGaAlP green light-emitting diodes [J]. Appl. Phys. Lett.,1992, 61(15) .. 1775-1777.
  • 9Tang C W,Van Slyke S A.Organic electroluminescene diodes[J].Applied Physics Letters,1987,51:913-915.
  • 10Tang C W,Van Slyke S A,Chen C H.Electroluminesence of doped organic thin films[J].J Appl Phys,1989,65(9):3610-3616.

共引文献27

同被引文献5

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部