溅射叠层金属前驱体−硫化法制备Cu2SnS3薄膜综合实验设计

Design of Comprehensive Experiment on Synthesis of Cu2SnS3 Thin Film by Sulfurization of Sputtered Stacked Metallic Precursor

利用磁控溅射法在玻璃基片上依次沉积Sn/Cu叠层前驱体并将前驱体在H2S∶N2气氛中硫化制备Cu2SnS3薄膜。分利用X射线衍射仪、拉曼光谱仪、扫描隧道显微镜、紫外−可见−近红外分光光度计、Hall测量系统等表征手段对薄膜进行性能表征。研究了硫化温度对Cu2SnS3薄膜性能的影响,结果表明,硫化温度为460℃时,制备出结晶性能好的P型Cu2SnS3半导体薄膜,此薄膜具有合适的载流子浓度~1017/cm^3、较高的载流子迁移率4.40 cm^2/(v·s)、较低的电阻率4.34Ω·cm。通过此综合实验的设计、Cu2SnS3薄膜的制备、性能表征和分析,有利于提高学生的实践能力和创新能力。

Cu2SnS3 thin films were prepared by sulfurization sputtered stacked metallic precursor in a H2S∶N2 atmosphere.The structures of the prepared films were analyzed by X-ray diffraction,Raman spectrometer,scanning tunneling microscope(STM),UVVIS-NIR spectrometer and Hall measurement system.The paper also studied the impact of sulfurization temperature on the properties of Cu2SnS3 thin films.Results showed that highly crystallized P-type Cu2SnS3 thin films were achieved when the sulfurization temperature is about 460℃.It had suitable carrier concentration of 1017/cm^3,high mobility 4.40 cm^2/(v·s)and low electrical resistance 4.34Ω·cm.The design of the comprehensive experiment combined with the Cu2SnS3 thin film preparation,performance characteristics and analysis have enhanced the hands-on ability of students and tap their creative potential.