Mg2Si/Si光电二极管的设计及性能研究

Research on the design and performance of Mg2Si/Si photodiode

在Silvaco TCAD软件的Atlas器件模块上建立了Mg2Si/Si光电二极管模型,然后对Mg2Si/Si光电二极管的光学和电学性能进行仿真研究,主要计算了击穿电压、暗电流、正向导通电压、光谱响应、量子效率等光学和电学性能。仿真计算结果表明:Mg2Si/Si光电二极管的击穿电压为36V,最大反向工作电压18V,暗电流大小为1.4×10-13A,正向导通电压为0.53V,外量子效率最大值为52%,表现出较好的近红外吸收特性。仿真优化结果可以用于指导环境友好型Mg2Si/Si光电二极管的制备工作。

The Mg2Si/Si photodiode model is established by Silvaco TCAD Atlas module, which the optical and electrical properties of the photodiode based on Mg2Si/Si are simulated. The optical and electrical properties such as breakdown voltage, dark current, photocurrent, forward conduction voltage, and spectral response are calculated. The simulation results show that the Mg2Si/Si photodiode has a breakdown voltage of 36 V, a maximum reverse operating voltage of 18 V, a dark current of 1.4×10-13A, a forward guide voltage of 0.53 V, a maximum external quantum efficiency of 52%, indicating good near-infrared absorption characteristics. The simulation optimization results can be used to guide the preparation of environment-friendly Mg2Si/Si photodiodes.