GaN HEMT经时击穿可靠性的研究进展

Research progress on reliability of time-dependent breakdown in GaN HEMT

氮化镓(GaN)高电子迁移率晶体管(HEMT)凭借着高电子迁移率、低导通电阻和高击穿场强等优点,在高频器件和大功率开关器件等领域得到了广泛运用。但经时击穿会导致在正常工作电压范围内的器件发生失效,因此GaN器件的经时击穿成为了评估器件可靠性的关键因素。介绍了GaN HEMT经时击穿的现象及偏压依赖性,总结了经时击穿的物理机制,讨论和展望了场板、钝化层以及栅极边缘终端结构对提升器件的经时击穿可靠性的作用。

Due to their high electron mobility,low on-resistance and high breakdown field,GaN high electron mobility transistors(HEMTs)are widely used in high frequency and high power switching devices.Time-dependent breakdown becomes a key factor in evaluating the reliability of GaN HEMT,because it could lead to failure of the device under normal operating voltage.In this paper,the phenomena and bias dependence of time-dependent breakdown in GaN HEMTs are introduced,and its physical mechanism are also summarized.The effect of the field plate,passivation layer,and gated edge termination structure to the the reliability improvement of time-dependent breakdown in GaN HEMTs are discussed.