摘要
针对微机电系统(MEMS)传感器电气互连的需求,开发了一种适用于MEMS器件芯片对基板键合的工艺方法。采用蒸发工艺在MEMS器件圆片上沉积厚度为2μm的Cu薄膜和1.5μm的Sn薄膜,在键合基板沉积2μm厚度的Cu金属层形成键合凸点,之后芯片与键合基板在280℃环境中保持30 s、260℃环境中保持15 min,通过Cu和Sn的互溶扩散工艺完成键合,从而实现电气互连。对键合面强度进行标定,计算剪切强度达4.3 MPa。测量键合区导线电气特性,导电性能良好。同时进行了能谱测试,结果表明符合Cu/Sn键合化合物组成成分,为实现芯片与陶瓷基板电气互连提供了一种新方法。
A chip-to-substrate bonding method was proposed to realize the electrical interconnection of micro-electro mechanical systems(MEMS)sensors.A 2μm thick Cu and a 1.5μm thick Sn were firstly deposited on the chip by evaporation.And a 2μm thick Cu was also deposited on the substrate by the same process.Based on the Cu-Sn eutectic bonding technology,the chip was bonded to the substrate at 280℃for 30 s and 260℃for 15 min respectively.The die-shear test showed that the bonding strength was 4.3 MPa.The electrical measurement exhibited a favorable conductivity.Additionally,the energy dispersive spectroscopy(EDS)investigation proved the existence of Cu-Sn intermetallic compounds.It is concluded that the Cu-Sn eutectic bonding can provide an effective method for electrical interconnection between the chip and the ceramic substrate.
作者
武绍宽
李孟委
金丽
王俊强
WU Shaokuan;LI Mengwei;JIN Li;WANG Junqiang(School of Instrument and Electronics,North University of China,Taiyuan 030051,China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,China;Nantong Institute of Intelligent Opto-Mechatronics of the North University of China,Nantong 226000,Jiangsu Province,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2020年第12期96-100,共5页
Electronic Components And Materials
基金
国家自然科学基金(61571405,61573323,61804137)。
