多线切割单晶硅等线损模型及其工艺研究

Study on the Model and Constant Wire Wear Loss Process of Multi-wire Sawing for Single Crystal Silicon

通过建立等线损切割模型,推算出等线损计算方法,同时研究了不同切割工艺参数对等线损工艺的影响。结果表明:钢线速度越快,回线率越高。切割厚度越大,硅片数越少,回线率越高;同时,等线损工艺能够保证整个加工过程中钢线的磨损量保持基本一致,对于工业化生产具有很好的指导借鉴作用。

The constant wire wear loss model was established so as to deduce the respective calculating method.Due to this method analyzing the relations between different slicing conditions.The results show that the feedback ratio of wire increase with the speed of the wire.And it also increase with the slicing thickness because of the amount of the wafers decrease.Meanwhile,the constant wire wear loss process can ensure the same feedback ratio of wire during the process of multi-wire sawing for single crystal silicon,which can guide the industrial production.