硅(Si)原子高激发态能级自然辐射寿命的测量

Measurements on radiative lifetimes of highly excited levels in Si I

能级的自然辐射寿命是确定跃迁几率和振子强度所需的重要参数.目前,硅原子高激发态能级自然辐射参数的实验数据还很缺乏,因此本文运用时间分辨激光诱导荧光和激光烧蚀等离子体技术,测量了硅原子位于47351.55~63844.65 cm-1之间的14个高激发态能级的自然辐射寿命.实验结果分布在8.7~43.4 ns之间,测量误差均小于10%,其中9个能级的结果属于首次报道.本文结果与可靠的分支比数据相结合可确定相关能级的跃迁几率和振子强度实验值.

Natural radiative lifetimes are important atomic data in determination of transition probabilities and oscillator strengths.At present,the experimental data of the natural radiative parameters of highly excited levels in silicon atom are still lacking.In this context,the lifetime measurements by the time-resolved laser-induced fluorescence and laser-ablation plasma techniques are reported for 14 highly excited levels of Si I with the energy range of 47351.55-63844.65 cm-1.The measured results range from 8.7 to 43.4 ns with uncertainties less than 10 percent,and among them nine results are reported for the first time as far as we know.These results can be combined with reliable branching ratio data to determine the experimental transition probability and oscillator strength values of related energy levels.