屏蔽板位置对多弧离子镀TiN薄膜表面性能的影响研究

Research on Influence of Shield Plate Position on Surface Properties of TiN Film by Multi Arc Ion Plating

研究了有无屏蔽板以及屏蔽板位置对TiN薄膜表面形貌、组织结构的影响。在多弧离子镀电弧靶前安装屏蔽板,用镜面抛光的高速钢片作基片。采用三维形貌轮廓仪、SEM、XRD表征了TiN薄膜的表面粗糙度、表面微观形貌以及内部组织结构等。结果表明,改变屏蔽板的放置位置,对基片的表面粗糙度,沉积的"大颗粒"尺寸变化以及物相组成具有显著影响:移动屏蔽板位置从距离基片为10~40 mm的过程中,基片表面粗糙度呈先变小后增大的趋势。同时,TiN晶粒择优取向由无晶形态逐渐变为显著的TiN(111)型多晶态,结晶程度逐渐增强;在有屏蔽板条件下,沉积到表面的"大颗粒"最大直径在3μm以内,而无屏蔽板条件下,约为5μm;当屏蔽板距离基片为25mm时,所得TiN薄膜的表面粗糙度为最低,为0.0179μm,"大颗粒"最大直径在1μm以内。屏蔽板位置对多弧离子镀涂层的表面形貌以及内部结构有较大影响,通过位置优选制备的TiN薄膜具有较优的综合性能。

The influence of the presence or absence of the shield plate and the position of the shield plate on the surface morphology and structure of tin film were studid. The shield plate was installed in front of the arc target of multi arc ion plating, and the mirror polished high-speed steel plate was used as the substrate.The surface roughness, micro morphology and internal structure of TiN films were characterized by three-dimensional profilometer, SEM and XRD.The results show that changing the position of the shield plate, in the process of moving the shield plate from 10 mm to 40 mm away from the substrate, the surface roughness of the substrate first decreases and then increases;meanwhile, the preferred orientation of tin grains gradually changes from amorphous to significant TiN(111) polycrystalline, and the crystallinity gradually increases. The maximum diameter of "big particles" deposited on the surface is less than 3 μm with shield plate, but about 5 μm without shield plate. When the distance between shield plate and substrate is 25 mm, the surface roughness of tin film is the lowest:0.0179 μm, and the maximum diameter of "big particles" is less than 1 μm. Therefore, the position of the shield plate has a great influence on the surface morphology and internal structure of the multi arc ion plating coating, and the tin film prepared by position optimization has better comprehensive properties.