摘要
光伏已然成为人类新能源革命的排头兵,如何让光伏真正实现平价上网,成为大众所接受的资源,需要在产品质量和成本方面进行不断探索优化。针对目前行业主流的M6硅片,通过对线切工艺相关参数进行分析,对照其变化对硅片质量的影响,以期探究硅片切割生产的最优化工艺。
Photovoltaic has become the vanguard of the new energy revolution.How to make photovoltaic network affordable and become a resource accepted by the public needs to be explored and optimized in terms of product quality and cost.In view of the current mainstream of M6 silicon wafer,through the analysis of the relevant parameters of wire cutting process,the influence of its changes on the quality of silicon wafer is compared,in order to explore the optimization process of silicon wafer cutting production.
作者
周美辰
ZHOU Meichen(Shanxi Institute of Mechanical&Electrical Engineering,Changzhi Shanxi 046011,China)
出处
《山西化工》
2020年第6期123-125,共3页
Shanxi Chemical Industry
基金
山西机电职业技术学院科研课题《金刚线切割工艺对硅片表观质量的影响研究》(JKY-19006)。
关键词
单晶硅片
张力
崩边
线痕
monocrystalline silicon wafer
tension
edge collapse
line mark