摘要
随着型号工程对电气系统长期贮存能力要求的不断提高,电气系统中程序或数据存储器对数据的保持能力变得尤为重要。本文基于阿伦尼斯模型(Arrhenius),选取0.13μm NOR型及65nm NOR型Flash存储器代表品种,开展了定时结尾数据保持试验。试验结果表明,基于上述工艺的Flash存储器的数据保持能力可满足贮存30年的需求,该结果为型号研制提供了有效依据。
With the increasing requirements of model engineering for long-term storage capacity of electrical systems,the data retention ability of program/data memory becomes more and more important in electrical systems.Based on the Arrhenius model,this paper selects 0.13μm NOR type and 65nm NOR type Flash memory as the representative varieties,and carries out the timed ending data retention test.The test results show that the data retention ability of Flash memory based on the above process can meet the demand of storage for 30 years,which provides an effective basis for model developments.
作者
崔莹
单旭涛
Cui Ying;Shan Xutao(China Electronics Standardization Institute,Beijing 100007,China;Component Reliability Center,China Academy of Launch Vehical Technology,Beijing 100076,China)
出处
《质量与可靠性》
2020年第6期29-32,共4页
Quality and Reliability