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基于阿伦尼斯模型的Flash存储器数据保持能力研究 被引量:5

Research on the Data Retention Ability of Flash Memory Based on Arrhenius Model
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摘要 随着型号工程对电气系统长期贮存能力要求的不断提高,电气系统中程序或数据存储器对数据的保持能力变得尤为重要。本文基于阿伦尼斯模型(Arrhenius),选取0.13μm NOR型及65nm NOR型Flash存储器代表品种,开展了定时结尾数据保持试验。试验结果表明,基于上述工艺的Flash存储器的数据保持能力可满足贮存30年的需求,该结果为型号研制提供了有效依据。 With the increasing requirements of model engineering for long-term storage capacity of electrical systems,the data retention ability of program/data memory becomes more and more important in electrical systems.Based on the Arrhenius model,this paper selects 0.13μm NOR type and 65nm NOR type Flash memory as the representative varieties,and carries out the timed ending data retention test.The test results show that the data retention ability of Flash memory based on the above process can meet the demand of storage for 30 years,which provides an effective basis for model developments.
作者 崔莹 单旭涛 Cui Ying;Shan Xutao(China Electronics Standardization Institute,Beijing 100007,China;Component Reliability Center,China Academy of Launch Vehical Technology,Beijing 100076,China)
出处 《质量与可靠性》 2020年第6期29-32,共4页 Quality and Reliability
关键词 FLASH 数据保持 阿伦尼斯 Flash data retention Arrhenius
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  • 1W Lukasezek.Wafer Charging Damage in IC Process Equipment[DB/OL].ECS International Semiconductor Technology Conference,Shanghai,China,2001.
  • 2K P Chang.Plasma Charging Damage[M].Great Britain,Springer,2001.
  • 3Stanley wolf Ph.D.Silicon process for the VLSI ERA[M].Department of electrical engineering California State University,Lattice press,2003.
  • 4W Lin.A new technique for measuring gate oxide leakage in charging protected MOSFETs[J].IEEE Trans.Electron Devices,Apr.2007,54(4):683-691.
  • 5W Lin,G.sery.Role of source/drain junction on plasma induced gate charging darnage in N MOSFET[J].In Proc.6th Int.Symp.2001,P2ID:112-115.
  • 6Jen-chou Tseng,Jenn-gwo Hwu.Oxide-Trapped Charges Induced by Electrostatic Discharge Impluse Stress[J].IEEE Trans.Ellctron Devices,Jul 2007,54(7):1666-1671.
  • 7S-Y Wang,c-ychin,P-R Jeng.Mechanisrns and solutions to gate oxide degradation in flash memory by tunnel-oxide nitridation engineering[J].IEEE Trans,Electron Device Lett.,Jun.2005,26(6):363-365.
  • 8S Ma,Y Zhang.Gate induced drain leakage current enhanced by plasma charging damage[J].IEEE Trans.Electron Devices,May 2001,48(5):1006-1008.
  • 9W Lukaszek.Investigation of Electron-Shading Effects druing High-Current Ion Implants8th International Symposium on Plasma-and Process-Induced Damage[DB/OL].Corbeil-Essonnes,Fiance,2003.
  • 10S Daryanani,J Shields.Comparison of Implant Charging Results Obtained with QUANTOXR and CHARMR-2[DB/OL].

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