摘要
针对高能同步辐射拟采用U35波荡器光源,用有限元软件对晶体单色器第一晶体着光面施加面功率密度和体功率密度分别进行数值模拟,给出晶体最高温和热变形去掉二次项和三次项后的高度误差和斜率误差,为高精度光源束线设计中单色器后面的热变形矫正装置提供参数要求。计算结果显示面吸收最高温和热变形去掉二次项和三次项后的斜率误差均大于体吸收结果,并且单色器热负荷利用体吸收进行模拟也更符合实际工况。
In the light of high energy synchrotron radiation,the U35 undulator light source was proposed to be used.The monochromator crystal was simulated by finite element software with surface power density and volume power density applied respectively.The height error and slope error after removing quadratic and cubic terms of thermal deformation and the highest temperature were given,which provided parameter requirements for the thermal deformation correction device behind the monochromator in the beam design of high-precision light source.The results show that both height error and slope error after removing quadratic and cubic terms of thermal deformation and the highest temperature of the surface absorption are larger than the results of volume absorption,and the volume absorption simulation of monochromator is in line with the actual conditions.
作者
高立丹
李明
杨福桂
姜永诚
Gao Lidan;Li Ming;Yang Fugui;Jiang Yongcheng(Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《低温与超导》
CAS
北大核心
2020年第11期8-11,共4页
Cryogenics and Superconductivity
基金
国家自然科学基金(11875059)资助。
关键词
硅晶体
面吸收
体吸收
热变形
Silicon crystal
Surface absorption
Volume absorption
Thermal deformation
