氮气流量对磁过滤沉积AlN纳米薄膜显微组织与性能的影响

Effect of Nitrogen Flow Rate on Microstructure and Properties of Filtered Magnetic Deposition AlN Nanofilms

AlN薄膜具有优良的绝缘性能和力学性能,被广泛应用于微电子领域的绝缘耐压涂层.采用离子注入结合磁过滤等离子体沉积技术,氮气流量为30~90 sccm,在304不锈钢和环氧玻璃纤维板上制备硬质AlN纳米涂层.采用XPS、AFM、XRD和SEM分析AlN纳米涂层的成分、表面形貌及结构.采用纳米硬度计、介电谱仪以及兆欧级电阻表研究涂层的力学和电学性能.结果表明,制备的AlN纳米薄膜结构致密、表面光滑.随氮气流量的增加,薄膜由强(100)择优取向转变为(100)、(002)和(102)任意取向生长.AlN纳米薄膜的纳米硬度、H/E*、H3/E*2先增加后减小,而电导率逐渐下降,阻抗逐渐增加.氮气流量为60 sccm时,AlN纳米涂层具有优良的力学性能和电学性能.

AlN films have excellent insulating properties and mechanical properties and are widely used in insulating pressure-resistant coatings in the field of microelectronics.AlN hard nano-coating was deposited on 304 stainless steel and epoxy glass board by filtered magnetic deposition combined with ion implantation technology when a nitrogen flow rate of 30~90 sccm.The composition,surface morphology and structure of AlN nano-coatings were analyzed by XPS,XRD,SEM and AFM.The mechanical and electrical properties of the coatings were investigated using a nanohardness tester,a dielectric spectrometer,and a megaohm resistance meter.The results show that the prepared AlN nanofilm has a dense structure and a smooth surface.As the flow rate of nitrogen increases,the film changes from a strong(100)preferred orientation to(100),(002),and(102)growth in any orientation.The nano-hardness,H/E*,and H3/E*2 of the AlN nano-film increased first and then decreased,while the electrical conductivity gradually decreased and the impedance gradually increased.The AlN nano-coating has excellent mechanical properties and electrical properties at a nitrogen flow rate of 60 sccm.