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大容量可控关断的直流输电用电流源型换流器研究综述 被引量:18

A Review on Large Capacity Controllable Switching Current Source Converter Research
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摘要 可控关断的电流源型换流器(current source converter,CSC)相较于LCC和VSC具有较好的技术优势,逆阻型大功率可关断半导体器件的快速发展为CSC在高压直流输电领域的应用提供了发展契机。针对现有CSC的拓扑、调制方法的优缺点进行调研和对比,分析总结出适用于高压直流输电的LCC-CSC拓扑和特定谐波消除调制方法。将基于LCC-CSC的混合直流输电系统与LCC和VSC进行多方位的对比分析,对LCC-CSC的技术优点、存在的问题及未来研究的方向进行了总结,为CSC在高压直流输电的工程应用提供前期研究基础。 The controllable switching current source converter(CSC)is considered to have promising technological advantages over LCC and VSC.The rapid development of reverse blocking high-power semiconductor devices provides a new opportunity for the application of CSC to HVDC system.Firstly,the advantages and disadvantages of the existing CSC topology and modulation methods are investigated in this paper.And then,the LCC-CSC topology and specific harmonic elimination modulation methods suitable for HVDC system are analyzed.Finally,the LCC-CSC based hybrid HVDC system is comprehensively compared with LCC and VSC technologies,and the technical advantages,existing problems and future researches of LCC-CSC are summarized.This work can provide a research basis for application of CSC in high-voltage DC transmission engineering.
作者 陈龙龙 徐飞 魏晓光 汤广福 崔翔 高冲 陈骞 CHEN Longlong;XU Fei;WEI Xiaoguang;TANG Guangfu;CUI Xiang;GAO Chong;CHEN Qian(State Key Laboratory for Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China;State Key Laboratory of Advanced Power Transmission Technology(Global Energy Interconnection Research Institute Co.,Ltd.),Beijing 102209,China;Key Laboratory of Power Electronics and Electric Drive,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;State Grid Zhejiang Electric Power Research Institute,Hangzhou 310014,China)
出处 《中国电力》 CSCD 北大核心 2021年第1期25-36,共12页 Electric Power
基金 国家电网公司科技项目(基于可控关断的电流源型换流器关键技术研究与样机研究)。
关键词 可控关断电流源型换流器 混合直流输电 可关断电力电子器件 controllable switching current source converter hybrid high voltage direct current system self-turn-off power semiconductor
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