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D波段辐射计前端的设计与应用 被引量:4

The study and application of D-band radiometer front-end
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摘要 设计了D波段直接检波式辐射计前端,主要包括D波段检波器模块、D波段低噪声放大器模块和D波段标准增益喇叭天线.基于商用零偏二极管HSCH-9161研制出D波段检波器,测试结果显示在D波段内,最高灵敏度接近1600 mV/mW,当频率小于140 GHz时,灵敏度大于400 mV/mW,在大于140 GHz频段内,灵敏度优于120 mV/mW.基于自研D波段低噪声放大器芯片研制出D波段低噪放模块,测试结果显示最大增益为10.8 dB@139 GHz,在137~144 GHz频率范围内,增益大于7.8 dB,输入端回波损耗优于5 dB,输出端回波损耗优于8.5 dB.最终搭建D波段直接检波式辐射计前端进行成像实验验证. A D-band(110~170 GHz)direct detection radiometer front-end which consists of detector module,low noise amplifier module and standard gain horn antenna.The D-band detector is designed and fabricated based on zero-bias Schottky barrier diode HSCH-9161 and the measurement shows that the voltage sensitivity is larger than 400 mV/mW between 110~140 GHz,larger than 120 mV/mW in D-band and the maximal value reaches about 1600 mV/mW@110 GHz.The D-band LNA module is packaged with self-designed MMIC and the module measurement shows the peak gain is 10.8 dB@139 GHz,the gain higher than 7.8 dB from 137 GHz to 144 GHz,the measured input return loss(S11)and output return loss(S22)are better than-5 dB and 8.5 dB in operating frequencies,respectively.Finally,the imaging experiments based on this front-end are carried out.
作者 刘军 何伟 乔海东 于伟华 吕昕 LIU Jun;HE Wei;QIAO Hai-Dong;YU Wei-Hua;LYU Xin(Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,Beijing Institute of Technology,Beijing 100081,China)
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2020年第6期704-708,共5页 Journal of Infrared and Millimeter Waves
基金 Supported by National Natural Science Foundation of China(61771057)。
关键词 D波段 辐射计前端 低噪声放大器 检波器 D-band radiometer front-end low noise amplifier(LNA) detector
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  • 1Sun Y F, Sun, J D, Zhou Y, et al. Room temperture GaN/AIGaN self-Mixing terahertz detector enhanced by resonant antennas [J]. Applied Physics Letters, 2011, 98: 98-99.
  • 2Sotoodeh M,Khalid A H, Rezazadeh A A. Empirical low-field mobility model for Ⅲ-Ⅴ compounds applicable in device simulation codes [J]. Appl. Phys. 2000, 87(6):2890.
  • 3Alexei Semenov, Oleg Cojocari, Heinz-Wilhelm,et al. Application of Zero-Bias Quasi-Optical Schottky-Diode detectors for Monitoring Short-Pulse and Weak Terahertz Radiation [J]. IEEE Electron Device Letters, 2010,31(7): 674-676.
  • 4Peter Sobis.Advanced Schottky Diode Receiver Front-Ends for Terahertz Applications.[D]. Chalmers University of Technology, Gteborg,Sweden. May 2011.
  • 5Hesler J L. Planar Schottky Diodes in Submillimeter-Wavelength Waveguide Receivers.[D]. School of Engineering and Applied Science, University of Virginia, Charlottesville, United States, 1996.
  • 6Tang A. Y. Modelling of terahertz planar schottky diodes.[D]. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gteborg, Sweden, 2011.
  • 7Jeffrey L Hesler,Thomas W Crowe.NEP and Responsivity of THz Zero-Bias Schottky Diode Detectors[C]. Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on the Terahertz Electronics: 844-845.
  • 8Jeffrey L. Hesler, Thomas W. Crowe. Responsivity and Noise Measurements of Zero-Bias Schottky Diode Detector[ C ]. 18tb Intl. Symp. Space Terahertz Techn. , Pasadena, March 2007.
  • 9Lei Liu,Jeffrey L.Hesler,Haiyong Xu,et al.A Broadband Quasi-Optical Terahertz Detector Utilizing a Zero Bias Schottky Diode [J].IEEE Microwave and Wireless Components Letters, 2010, 20(9):504-506.
  • 10波扎, 微波工程(第三版).北京:电子工业出版社,2007.

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