硅源种类对一维SiC纳米材料结构和发光性能的影响

Influence of Si source type on microstructure and luminescence property of 1D SiC nanomaterial

以Si粉和SiO2粉为硅源,活性炭为碳源,Fe2O3为添加剂,采用碳热还原法,在氢气保护下经1500℃保温3h烧制,研究了硅源种类对一维SiC纳米材料结构和发光性能的影响。结果表明,Si粉与活性炭的反应活性强于SiO2粉,易于制得发光性能较好的一维SiC纳米材料,其具有光滑的表面及无定形SiO2外壳包裹的核壳结构,并具有较宽的发射波长。因非晶态SiO2层的存在及一维SiC纳米材料内部结构缺陷的共同作用,其在467nm和435nm处的带隙较SiC体材料显示出较大的蓝移现象。

At the sintering temperature of 1500℃for 3 h in hydrogen atmosphere,1D SiC nanomaterials were prepared with Si and SiO2 powers as Si source,activated carbon(AC)and Fe2O3 as the C source and additive,respectively.Effects of Si source types on microstructure and luminescence properties of 1D SiC were studied.Results showed that the reaction activity of Si with AC was stronger than that of SiO2.1D SiC with better luminescence properties were prepared easily,they had a smooth surface,a core-shell structure wrapped in amorphous SiO2 shell,and a wide emission wavelength.Compared with SiC bulk materialss,the band gaps at 467 nm and 435 nm showed large blue shifts due to the existence of amorphous SiO2 layer and structural defects of 1D SiC.