摘要
高键合强度与高生产率的银浆体系是芯片实现小型化、轻薄化的基础,本文研发了一种高芯片键合强度的新型银浆体系(银浆B),通过五元素三水平(53)正交实验,探讨了银浆量、点胶高度、芯片键合力、银浆固化时间、固化温度等五因素对芯片键合强度及结构的影响;以及基于实验设计(DOE)和响应曲面分析(RSM)等统计方法,分析了芯片键合的过程,优化了芯片键合过程的固化时间、固化温度和银浆量等参数。采用银浆B体系以及优化的制程参数,使得芯片键合强度制程能力指数(Cpk)从0.56提高到2.8。
High strength and high yield adhesive system is the basis for die bonding of minimized and thinner chips.This paper studies a new type of die adhesive system with high bonding strength.Die adhesive volume,dispense height,bonding force,bonding time and bonding temperature are studied through orthogonal design with four factors and three levels.The die bonding process is analysed by DoE and RSM method.As a result,the process parameters such as adhesive curing time,curing temperature and adhesive volume are optimized.Finally,the die bonding strength process capability(Cpk)is increased from 0.56 to 2.8 by implementing adhesive System B with optimized process parameters.
作者
堵美军
梁国正
DU Mei-jun;LIANG Guo-zheng(College of Chemistry,Chemical Engineering and Material Science,Soochow University)
出处
《中国集成电路》
2021年第1期63-69,共7页
China lntegrated Circuit
