基于电荷注入机制的驱动电压可重构的MEMS开关

A Novel MEMS Switch with Reconfigurable Driving Voltage Based on the Charge Injection Mechanism

本文提出了一种新方法来解决传统静电驱动的电容式微机电(MEMS)开关的驱动电压过高的问题。通过对介质层预先注入和存储适量的电荷,在该介质层中形成稳定的内建电势,这将优化MEMS固支梁的下拉操作,从而有效降低MEMS开关的驱动电压。此外,在开关制备完成后,仍可通过调控介质层中注入电荷的数目来调节内建电势大小,从而在不改变MEMS开关结构参数的条件下实现MEMS开关驱动电压的可重构功能。建立了该新型MEMS开关的解析模型,对该新型模型进行分析,并验证了模型的正确性。

A new method to solve the problem of excessively high driving voltage of Micro-Electro-Mechanical System(MEMS)switch has been presented based on the capacitive electrostatic driving.By intentionally injecting an appropriate amount of charges into the dielectric layer on the driving electrode,the stable built-in potential can be formed in the dielectric layer,and this built-in potential can effectively promote the drag operation of the MEMS beam,thus greatly reducing the driving voltage of the RF MEMS switch.In addition,even though the preparation of the MEMS switch is completed,the built-in potential in the dielectric layer can also be adjusted by modulating the number of the injected charges,therefore,the MEMS switch with a function of reconfigurable driving voltage can be realized without changing the structural parameters of the MEMS switch.The model of this novel MEMS switch was established by the combination of spring mass and parallel plate capacitor,and the detailed analysis of this model was carried out and the correctness of the model was verified.