Si80Ge20P3合金的制备及其热电性能

Preparation of Si80Ge20P3 and its thermoelectric properties

采用熔炼和热压烧结制备了合金Si80Ge20P3,Si和Ge中添加P实现N型掺杂,熔炼实现Si和Ge合金化,热压烧结使合金Si80Ge20P3成型.对合金Si80Ge20P3进行XRD,SEM及EDS表征并进行电导率、Seebeck系数、热导率等热电参数测试.结果表明,制备的Si80Ge20P3结构致密、硅锗分布均匀,合金化完全,实现了杂质P的有效掺杂.Si80Ge20P3具有较佳的热电性能,热导率κ随温度升高而降低,在800℃时为2.6 W/(m·K),其功率因子PF和热电优值ZT随温度升高而增加,在800℃时ZT值达到1.06.

Si80Ge20P3 was prepared by melting and hot-pressing sintering.P was added to Si and Ge to achieve N-type doping,Si and Ge were alloyed by melting,Si80Ge20P3 was formed by hot-pressing sintering.The Si80Ge20P3 was characterized by XRD,SEM and EDS,and the thermoelectric parameters such as conductivity,seebeck coefficient and thermal conductivity were tested.The results show that the prepared Si 80 Ge 20 P 3 have a compact structure,a uniform distribution of silicon germanium,complete alloying and effective doping of impurities P.Si80Ge20P3 has better thermoelectric properties.The thermal conductivityκdecreases with increasing temperature,which is 2.6 W/(m·K)at 800℃.Its power factor PF and thermoelectric figure of merit ZT increase with increasing temperature.The ZT value reached 1.06 at 800℃.