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基于锑化物二类超晶格的多色红外探测器研究进展 被引量:3

Research Progress in Antimonide-Based Type-Ⅱ Superlattice Multi-Color Infrared Detectors
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摘要 近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面,二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高,以及成本低等优越性能,使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。 In recent years,Type-ⅡInAs/GaSb superlattice infrared detectors have experienced significant developments in material growth quality,device structural designs,and imaging applications.Especially for multi-color infrared detection,type-Ⅱsuperlattice has several fundamental properties such as tunable band gap,low dark current,high quantum efficiency,high uniformity,and low cost,that makes it the preferred material for the third-generation infrared detection technology.In this paper,recent advances in antimonide multi-color detectors at the Center for Antimonide Narrow-Bandgap Semiconductors have been reported.Development of a variety of high-performance multi-color infrared detectors with low noise,high quantum efficiency and low optical crosstalk,such as short/mid,short/long,mid/long,long/long,and mid/long/very long multi-color infrared detectors were successfully realized.
作者 蒋洞微 徐应强 王国伟 牛智川 JIANG Dongwei;XU Yingqiang;WANG Guowei;NIU Zhichuan(State Key Laboratory for Supperlattices and Microstructures,Institute of Semiconductors,Chinese Academy ofSciences,Beijing 100083,China;Centre for Antimonide Narrow-Bandgap Semiconductors(CANS),Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China)
出处 《人工晶体学报》 EI CAS 北大核心 2020年第12期2211-2220,共10页 Journal of Synthetic Crystals
基金 国家重点研发计划(2019YFA0705203,2018YFA0209104) 国家自然科学基金(62004189) 航空科学基金(20182436004,201924012001)。
关键词 INAS/GASB 二类超晶格 多色红外探测器 量子效率 光学串扰 InAs/GaSb Type-Ⅱsuperlattice multi-color infrared detector quantum efficiency optical crosstalk
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