大功率SiCMOSFET驱动电路设计

Design of High Power SiC MOSFET Driver Circuit

为了使强流重离子加速器装置(HIAF)碳化硅功率开关器件SiCMOSFET工作在理想状态,设计了基于SIC1182K驱动芯片的SICMOSFET驱动电路。对该驱动电路的输出电压、响应时间、脉宽连续可调性、稳定性和可靠性进行实验测试,测试结果表明:该驱动电路能够长时间、稳定可靠工作,满足SiC MOSFET的工作需求。

In order to make the High Intensity Heavy-ion Accelerator Facility(H IA F)silicon carbide power switching device SiC MOSFET work in an ideal sta te,a SiC MOSFET driver circuit based on the SIC1182K driver chip is designed.The driver circuit's output voltage,response tim e,pulse width continuous adjustability,stability,and reliability were tested experimentally.The test results show that the driver circuit can work stably and reliably for a long time and meet the working requirements of SiC MOSFETs.