射频前端组件强电磁辐射场效应预测方法

Prediction Method of Strong Electromagnetic Radiation Field Effect for RF Front-end Components

通过对限幅器、低噪声放大器(Low Noise Amplifier, LNA)等射频前端组件及模块的物理和数值建模,分析高功率微波和电磁脉冲场对典型器件作用的物理过程与干扰、损伤机理,实现电磁辐射效应场线-器件协同仿真,为射频前端电路端口等敏感部位强电磁辐射效应预测提供技术支撑.论文利用理论分析、ADS仿真分析、注入实验以及失效分析方法开展了微波脉冲对双极型晶体管和低噪声放大器的效应研究.通过实验详细分析后可以确定低噪声放大器输出波形随注入功率增加的变化特性与仿真结果相符,获得了不同脉冲参数(包括脉宽、频率和脉冲个数)以及器件不同工作状态对LNA损伤功率的影响规律.最后,对比分析了半导体器件损伤前后的电特性.

Through the physical and numerical modeling of RF front-end components and modules such as limiters and low noise amplifiers,the physical process and interference and damage mechanism of high power microwave and electromagnetic pulse fields on typical devices are analyzed,and the field-line-device co-simulation of electromagnetic radiation effects is realized,which provides technical support for the prediction of strong electromagnetic radiation effects in sensitive parts such as RF front-end circuit ports.The effects of microwave pulse on bipolar transistors and low noise amplifiers are studied by theoretical analysis,ADS simulation analysis,injection experiment and failure analysis.After detailed analysis of the experiment,it can be determined that the output waveform of LNA changes with the increase of injection power,which is consistent with the simulation results.The effects of different pulse parameters(including pulse width,frequency and number of pulses)and different working states of the device on the damage power of LNA are obtained.Finally,the electrical characteristics of semiconductor devices before and after damage are compared and analyzed.