TiO2掺杂对Al2O3的致密化、微观结构和微波介电性能的影响

Effect of TiO Doping on Densification,Microstructure and Microwave Properties of AlO

研究了TiO2掺杂对Al2O3的致密化、微观结构和微波介电性能的影响。结果表明,适量的TiO2有利于促进Al2O3陶瓷的致密化。当TiO2掺杂量从0.2 wt.%增加到0.6 wt.%时,Al2O3陶瓷的密度从约3.83 g/cm^3提高至约3.91 g/cm^3,进一步增加TiO2掺杂量会导致Al2O3陶瓷密度的降低;同时,当TiO2掺杂量达到0.4 wt.%以上时,Al2O3陶瓷会出现异常晶粒长大。另一方面,Al2O3陶瓷的介电常数会随着TiO2掺杂量的增加而有所提高,但介电损耗则维持在小区间内波动。文中还对相关的机理进行了简单的探讨。

The influence of TiO2 doping on the densification,microstructure and microwave dielectric properties of Al2O3 has been investigated.The results show that the appropriate amount of TiO2 can promote the densification of Al2O3 ceramics.When the content of TiO2 increases from 0.2 wt.%to 0.6 wt.%,the density of Al2O3 ceramics increases from about 3.83 g/cm^3 to about 3.91 g/cm^3,and further increase of TiO2 content will lead to the decrease of the density of Al2O3 ceramics;at the same time,when the content of TiO2 reaches more than 0.4 wt.%,the abnormal grain growth will appear.On the other hand,the dielectric constant of Al2O3 ceramics increases with the increase of TiO2 content,but the dielectric loss keeps fluctuating in small areas.The related mechanism is also discussed.