一种适用于毫米波的InP HBT小信号模型与参数提取方法

A small signal model and parameter extraction method for millimeter wave InP HBT

为了精确提取磷化铟异质结双极型晶体管(InP HBT)在毫米波频段的寄生参数和本征参数,研究了器件的物理结构,从物理上区分了通孔和电极的寄生元件,建立了一个适用于毫米波频段的具有详细寄生网络的分布式InP HBT小信号模型,同时提出了一种直接的参数提取方法且不使用任何数值优化。结果显示,若忽略寄生参数的影响,本征参数提取结果会被高估,且寄生电阻与寄生电感存在明显的趋肤效应。通过ADS2016仿真工具的散射参数模拟结果与测试数据的一致性比较,验证了小信号模型和参数提取方法的有效性和准确性。

To accurately extract the parasitic and intrinsic parameters of indium phosphide heterojunction bipolar transistors(InP HBTs)in the millimeter-wave frequency band,the physical structure of the device was investigated,and the parasitic elements of the through-hole and electrode were physically distinguished.A distributed small-signal model with a detailed parasitic network was established for the InP HBT,which is applicable to the millimeter-wave frequency band.Meanwhile we proposed a direct parameter extraction method without using any numerical optimization.The results show that the intrinsic parameter extraction results are overestimated if the parasitic parameters are ignored and there is a significant skin effect between parasitic resistance and inductance.The small-signal model and parameter extraction methods are validated by comparing the simulated scattering parameters from the ADS2016 simulation tool with the test data.