等离子体增强原子层沉积技术制备过渡金属薄膜的研究进展

Progress in the Preparation of Transition Metal Films by Plasma Enhanced Atomic Layer Deposition

原子级的处理对应用于计算和数据存储的最先进的电子设备,以及与物联网、人工智能和量子计算相关的新兴技术正变得越来越重要。等离子体增强原子层沉积(PEALD)是一种原子级表面沉积技术,由于其较高的反应活性以及较低的沉积温度日益受到研究者的关注。本文介绍了PEALD技术的基本原理以及相对于其他薄膜沉积技术的优势,之后从前驱体和基底材料的影响等方面介绍了利用PEALD制备Ti、Co、Ni、Cu、Ru、Pd、Ag、Ta、Ir和Pt等过渡金属薄膜以及它们在微电子领域的应用现状,最后进行了总结和展望。

Atomic-level processing corresponds to the most advanced electronic devices used for computing and data storage,and emerging technologies related to the internet of things,artificial intelligence,and quantum computing are becoming more and more important.Plasma enhanced atomic layer deposition(PEALD)is an atomic level surface deposition technology.Due to its high reactivity and low deposition temperature,PEALD has attracted more and more attention.This paper introduces the basic principle of PEALD technology and its advantages over other thin film deposition methods.Then it introduces the characteristics of PEALD technology of transition metals Ti,Co,Ni,Cu,Ru,Pd,Ag,Ta,Ir and Pt as well as the development status in the field of microelectronics.Finally,the summary and prospect are given.