Electronic Transport in MoSe_(2) FETs Modified by Latent Tracks Created by Swift Heavy Ion Irradiation
摘要
Unique characteristics of transition metal dichalcogenides(TMDCs)such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic.
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1Zeng Jian,Duan Jinglai,Zhang Shengxia,Zhai Pengfei,Yao Huijun,Liu Jie.Swift Heavy Ion Irradiation Induced Band Structure Variation in Monolayer Graphene[J].IMP & HIRFL Annual Report,2019(1):104-105.
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2Zhai Pengfei,Xu Lijun,Nan Shuai,Li Weixing,Li Zongzhen,Ai Wensi,Hu Peipei,Zeng Jian,Zhang Shengxia,Liu Li,Liu Jie.Latent Tracks in Two TiO_(2) Polymorphs Induced by Swift Heavy Ions[J].IMP & HIRFL Annual Report,2019(1):105-106.
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3Yan Xiaoyu,Liu Jie,Liu Tianqi,Hu Peipei,Zhao Peixiong,Ai Wensi,Sun Youmei.Response of SiC Schottky Barrier Diode to Swift Heavy Ion Irradiation[J].IMP & HIRFL Annual Report,2019(1):107-107.
