Response of SiC Schottky Barrier Diode to Swift Heavy Ion Irradiation

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摘要 Due to the lager bandgap,higher breakdown electric field,higher thermal conductivity and lager saturated electron drift velocity of silicon carbide(SiC),the SiC power devices have many advantages like high-voltage operation.

作者 Yan Xiaoyu Liu Jie Liu Tianqi Hu Peipei Zhao Peixiong Ai Wensi Sun Youmei

机构地区不详

出处《IMP & HIRFL Annual Report》 2019年第1期107-107,共1页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

关键词 BREAKDOWN SCHOTTKY lager

分类号 TN3 [电子电信—物理电子学]

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Response of SiC Schottky Barrier Diode to Swift Heavy Ion Irradiation

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