Investigation of Heavy Ion Irradiation Effects on Microstructural and Optical Properties of Amorphous HfO_(2) Thin Films

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摘要 Amorphous HfO_(2) is widely utilized as high-k gate dielectric materials for reducing the tunneling leakage current and improving the reliability to overcome the physical limitation of traditional gate dielectric like SiO_(2)[1,2].

作者 Li Zongzhen Liu Jie Zhai Pengfei Zeng Jian Zhang Shengxia Hu Peipei Xu Lijun Ai Wensi Liu Li

机构地区不详

出处《IMP & HIRFL Annual Report》 2019年第1期108-108,共1页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

关键词 HfO_(2) DIELECTRIC FILMS

分类号 TN3 [电子电信—物理电子学]

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IMP & HIRFL Annual Report

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Investigation of Heavy Ion Irradiation Effects on Microstructural and Optical Properties of Amorphous HfO_(2) Thin Films

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