Tracks Formation and Morphology in GaN Induced by Swift Heavy Ions

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摘要 GaN single crystals were irradiated by 129Xe and 209Bi ions in the range of 800~2300 MeV,respectively.The samples were studied by transmission and high-resolution electron microscope and Raman spectroscopy to reveal the tracks and defects induced in the samples after the irradiation process.

作者 Hu Peipei Liu Jie Zhai Pengfei Xu Lijun Zeng Jian Zhang Shengxia Li Zongzhen

机构地区不详

出处《IMP & HIRFL Annual Report》 2019年第1期109-110,共2页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

关键词 GAN process. SWIFT

分类号 TN3 [电子电信—物理电子学]

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IMP & HIRFL Annual Report

2019年第1期

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Tracks Formation and Morphology in GaN Induced by Swift Heavy Ions

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