低介电常数材料研究及进展

Research Progress of low-κMaterials

叙述了集成电路制造技术的发展及低介电常数(κ)金属介电层的研究背景,回顾了传统SiO2作为金属介电层所面临的问题,低κ材料取代传统SiO2介电材料是解决上述问题的有效方法。分析了低κ材料的性能要求,论述了改性SiO2基介电材料、氟化非晶碳材料、有机介电材料和复合介电材料4大类低κ材料国内外研究进展,认为现有的各种低κ材料都存在一些优缺点,表明获得综合性能优异的低κ材料才是最终目的。认为可通过分子设计制备低κ材料,研究分子结构与性能之间的关系,从而摸索出适合低κ材料的研究方法。

The development of IC manufacturing technology and research background of low-κinter-metal dielectric were reviewed.The problems faced by traditional SiO2 as inter-metal dielectric were reviewed.It is concluded that replacing the traditional SiO2 with low-κmaterials is an effective method to solve the above problems.The performance requirements of low-κmaterials were analyzed,review focuses on the research progress of modified SiO2-based low-κmaterials,fluorinated amorphous carbon materials,organic low-κmaterials,and composite low-κmaterials at home and abroad.The advantages and disadvantages of various low-κmaterials are discussed.It showed that the ultimate goal is to obtain low-κmaterials with excellent overall performance.It is pointed out that the molecular design can be used to prepare low-κmaterials,and the relationship between molecular structure and properties can be studied.The research method suitable for low-κmaterials was found out.