一种基于E-FLASH工艺的低功耗全集成锁相环

An Integrated Low Power Phase Lock Loop Based on E-FLASH Process

基于国内0.13 μm E-FLASH工艺,设计了一种由E-FLASH控制的锁相环芯片,为芯片提供可配置的频率源,内置LC压控振荡器、射频分频器、数字分频器、环路滤波器接口和电荷泵,实现了锁相环的全集成。芯片功耗仅为30 mA,面积仅1 mm ×1.5 mm。工艺可集成于E-FLASH工艺的片上系统,能提供良好的相位噪声和抖动特性,最高输出频率可达2.4 GHz,锁定后10 kHz频偏的相位噪声优于-116 dBc/Hz。

Based on the domestic 0.13 μm E-FLASH process,a phase lock loop chip controlled by E-FLASH is designed to provide a configurable frequency source for the chip,built-in LC voltage controlled oscillator,RF frequency divider,digital frequency divider,loop filter interface and charge pump,which can realize the full integration of phase lock loop.The power of the chip is only 30 mA,and the area is only 1 mm ×1.5 mm.The process can be integrated into the system-on-a-chip of the E-FLASH process,which can provide good phase noise and jitter characteristics.The maximum output frequency can reach 2.4 GHz.The phase noise of the locked 10 kHz frequency offset is better than-116 dBc/Hz.