摘要
氧化铟纳米线(In_(2)O_(3)NWs)因具有合适的禁带宽度、较高的电子迁移率等优异的电学性能,可应用于晶体管、存储器、传感器等而备受关注,成为研究的热点。本实验通过简单易行的化学气相沉积法生长了In_(2)O_(3)纳米线,结合电子束光刻(EBL)成功制备了In_(2)O_(3)纳米线场效应晶体管器件(Field effect transistor,FET),利用溅射系统在In_(2)O_(3) FET上沉积不同厚度的Pt,研究了Pt纳米颗粒对In2O3 FET电学性能的影响。利用扫描电子显微镜、X射线衍射及光致发光光谱研究了In_(2)O_(3)纳米线的形貌、组成及光学性能;利用X射线光电子能谱分析纳米线的元素化学价态和组成。通过分析沉积Pt前后In_(2)O_(3)纳米线FET的电学性能发现,沉积Pt纳米颗粒后场效应晶体管阈值电压(Vth)有向右偏移的趋势,开关比(Ion/Ioff)有所下降,载流子浓度降低,载流子迁移率增大。晶体管阈值电压(Vth)向右偏移可归因于沉积Pt后金属/半导体接触形成电子转移,此外纳米线的表面缺陷可以充当吸附位点,表面缺陷吸附的氧和水分子将捕获来自纳米线的自由电子,导致表面电子消耗,从而使得载流子浓度降低。研究结果表明,Pt金属纳米颗粒对In_(2)O_(3)纳米线FET的电学性能存在一定的影响。
Indium oxide(In_(2)O_(3)) nanowire has great potential in transistor, storage and sensor applications owing to their suitable band width and high electron mobility. In this article, In_(2)O_(3) nanowires were fabricated by simple chemical vapor deposition(CVD). Combining with electron beam lithography(EBL), In_(2)O_(3) FETs(Field effect transistor, FET) were successfully prepared. Then, Pt was deposited on In2O3 FET with different thickness by sputtering system via different deposition time, and the effect of Pt on the electrical property of In_(2)O_(3) FETs was investigated. The morphology, structure, optical properties and chemical valence of elements and composition of nanowires were characterized by SEM, XRD, PL and XPS. By analyzing the electrical performance of In_(2)O_(3) FETs before and after Pt deposition, the threshold voltage(Vth) of FETs tends to drift to the right, the Ion/Ioff and carrier concentration are a bit decrease but the carrier mobility is a bit increase. The shift of Vth is attributed to the electron transfer in the metal and semiconductor system. In addition, the surface defects of nanowires act as the adsorption sites can adsorb oxygen and water molecules, which will capture free electrons from the nanowires, results in the decrease of the carrier concentration. The results show that the Pt metal nanoparticles can modulate the electrical properties of In2O3 FETs.
作者
吴黎明
徐进霞
范志成
梅菲
周远明
刘凌云
WU Liming;XU Jinxia;FAN Zhicheng;MEI Fei;ZHOU Yuanming;LIU Lingyun(Hubei Key Laboratory of Solar Power Generation and Energy Storage Operation Control,Hubei University of Technology,Wuhan 430068,China;Hubei Provincial Collaborative Innovation Center for Efficient Use of Solar Energy,Hubei University of Technology,Wuhan 430068,China;School of Electrical and Electronic Engineering,Hubei University of Technology,Wuhan 430068,China;College of Science,Hubei University of Technology,Wuhan 430068,China)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2021年第4期4028-4033,共6页
Materials Reports
基金
国家自然科学基金(11305056)
太阳能高效利用及储能运行控制湖北省重点实验室开放基金(HBSEES201901)。
