期刊文献+

城轨车辆电子板件衰变检测及健康管理方式探索 被引量:1

Exploration on the Decay Detection and Prognostic and Health Management of Electronic Board for Urban Rail Vehicles
下载PDF
导出
摘要 对城轨车辆电子板件维护现状进行分析,提出了基于数据驱动健康管理(PHM)的管理体系和方法运用,在前期开展过程中着重进行状态监测和数据收集,结合实际运用的方法进行整理和归纳。对电子板件元器件中使用范围广、故障率高的电解电容、薄膜电阻、MOSFET做了失效机理分析和寿命预测评估。利用数据驱动PHM方法,结合车辆制动系统电源板案例,阐述了该方式在实际中的运用,并取得了明显的降本、增效效果,具有良好的推广前景。 the current situation of electronic panel maintenance of urban rail vehicles was analyzed, the management system and method application based on data-driven health management(PHM) were put forward, condition monitoring and data collection in the early development process were focused on, the methods combined with practical application were sort out and summarized. The failure mechanism and life prediction of electrolytic capacitors, thin film resistors and MOSFET, which were widely used and have high failure rate, were analyzed. Using the data-driven PHM method, combined with the case of vehicle braking system power board, the application of the method in practice was expounded, and the effect of cost reduction and efficiency increase was obvious, which has a good promotion prospect.
作者 谢帅 卢勇 张栋 Xie Shuai;Lu Yong;Zhang Dong(Guangzhou Metro Group Co.,Ltd.,Guangzhou 510310,China)
出处 《机电工程技术》 2021年第1期177-182,221,共7页 Mechanical & Electrical Engineering Technology
关键词 电子板件 维修模式 数据驱动 健康管理 electronic board maintenance mode data driven prognostic and health management
  • 相关文献

参考文献5

二级参考文献51

  • 1赵建印,刘芳,孙权,周经伦.基于性能退化数据的金属化膜电容器可靠性评估[J].电子学报,2005,33(2):378-381. 被引量:26
  • 2严钦云,周继承,杨丹,黄云.基于温冲应力环境的Au-Al键合可靠性[J].电子产品可靠性与环境试验,2006,24(1):38-41. 被引量:5
  • 3韩春梅,邓世舜,赵振江.地铁运营风险管理[J].现代城市轨道交通,2006(4):51-53. 被引量:10
  • 4JIMENEZ M, NOGUEIRA E, PEREZ Q, et al. Accelerated test of power MOSFET [ C ]//IEEE Proc of 5th ESREF'94 Conf. Glasgow, 1994 : 221-223.
  • 5TOSIC N, PESIC B, STOJADINOVIC N. High temperature testing of power VDMOS transistors [ J ]. Microelectronics Reliability, 1997,37 (10) : 1759-1762.
  • 6BARLETrA G, CURRO G. Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS [ J ]. Microelectronics Reliability, 2005,45 (5-6) : 994-999.
  • 7DONOVAL D, VRBICKY A, MAREK J, et al. Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour[ J]. SSE ,2008,52(6) :892-898.
  • 8RISTIC G S, PEJOVIC M M. Fowler-nordheim high electric field stress of power VDMOSFETs [J]. SSE ,2005,49(7) : 1140-1152.
  • 9ALWAN M, BEYDOUN B, KETATA K, et al. Bias temperature instability from gate charge characteristics investigations in n- channel power MOSFET[J]. Microelectronics Journal, 2007,38 (6-7) :727-734.
  • 10STOJADINOVIC N, DANKOVIC D, MANIC I, et al. Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs [ C ]//Proc of Telecommunications in Modem services, Satelite, Cable and Broadcasting Serbia, 2007:275-282.

共引文献64

同被引文献3

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部