拓扑量子材料光电探测器研究进展

Recent progress and prospects of topological quantum material-based photodetectors

物质拓扑态的发现是近年来凝聚态物理和材料科学的重大突破。由于存在不同于常规半导体的特殊拓扑量子态(如狄拉克费米子、外尔费米子、马约拉纳费米子等),拓扑量子材料通常能表现出一些新颖的物理特性(如量子反常霍尔效应、三维量子霍尔效应、零带隙的拓扑态、超高的载流子迁移率等),因而在低能耗电子器件和宽光谱光电探测器件领域具有重要的研究价值。本文综述了拓扑量子材料的特性与制备方法以及在光电探测领域的发展现状,重点讨论了拓扑绝缘体与拓扑半金属宽光谱光电探测器的器件结构与性能,同时也对拓扑量子材料在光电探测器领域的发展前景进行了展望。

The discovery of the topological quantum states of matter is a major milestone in condensed matter physics and material science.Due to the existence of special surface states(e.g.Dirac fermions,Weyl fermions,Majorana fermions),topological quantum materials can usually exhibit some novel physical properties(such as the quantum anomalous Hall effect,3D quantum Hall effect,Zero-band gap caused by topological states,ultra-high carrier mobility,etc.),which are different from conventional semiconductors.Because of this,there is an abundance of prospects for applications in low-power electronic and optoelectronic devices,especially in broad-spectrum detection.However,the application of topological quantum materials in the field of photoelectric detection is still in the exploratory stage at present.This article reviews the characteristics and preparation methods of topological quantum materials and the development status with respect to optical-sensing materials in photodetectors.The structure and performance of the devices based on topological quantum materials are also mentioned as the development prospects in the field of broad-spectrum detection.