摘要
GaN高电子迁移率晶体管(HEMT)器件具有工作频率高、导通损耗小等优点,已经开始广泛应用在多种高频、高效功率转换器中,而拥有更高集成度的全GaN单片集成电路可进一步提高基于GaN HEMT器件功率变换器的性能。介绍了不同类型的全GaN集成工艺平台以及GaN功能子电路的研究进展,并对全GaN单片集成功率IC的研究现状进行了综述。
GaN HEMT devices,which have excellent features such as high breakdown voltage and low on-resistance,have been widely applied in high voltage,high frequency and high efficiency power converters.Higher integration of all-GaN monolithic IC can further improve the performance of power converters based on GaN HEMT.This article introduces several all-GaN integration platforms and basic GaN functional subcircuits,then the research status of all-GaN monolithic integrated power converter are reviewed.
作者
赖静雪
陈万军
孙瑞泽
刘超
张波
LAI Jingxue;CHEN Wanjun;SUN Ruize;LIU Chao;ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
出处
《电子与封装》
2021年第2期23-34,I0002,共13页
Electronics & Packaging
基金
国家自然科学基金(62004030)。
